SIR112DP-T1-RE3

SIR112DP-T1-RE3

SIR112DP-T1-RE3

Hersteller: Vishay Semiconductors
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
sir112dp-1766767.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1020 Stücke
Lieferzeit 14-28 Tag (e)
14+ 3.74 EUR
16+ 3.38 EUR
100+ 2.63 EUR
500+ 2.17 EUR

Technische Details SIR112DP-T1-RE3

Description: MOSFET N-CHAN 40V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Base Part Number: SIR112.

Preis SIR112DP-T1-RE3 ab 2.17 EUR bis 3.74 EUR

SIR112DP-T1-RE3
SIR112DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR112
sir112dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR112DP-T1-RE3
SIR112DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
sir112dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR112DP-T1-RE3
SIR112DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
sir112dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen