SIR112DP-T1-RE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.7 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.15 EUR |
| 3000+ | 1.07 EUR |
| 6000+ | 1.06 EUR |
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Technische Details SIR112DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 37.6A/133A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIR112DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SIR112DP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 37.6A/133A PPAKInput Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIR112DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 37.6A/133A PPAK Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIR112DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 133A Pulsed drain current: 200A Power dissipation: 62.5W Case: PowerPAK® SO8 On-state resistance: 2.65mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIR112DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR112DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.96mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.6A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIR112DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 133A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 133A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: PowerPAK® SO8
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH