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SIR120DP-T1-RE3

SIR120DP-T1-RE3 Vishay Semiconductors

sir120dp.pdf
Hersteller: Vishay Semiconductors
MOSFETs PPAKSO8 N-CH 80V 24.7A
auf Bestellung 4065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.08 EUR
10+2.62 EUR
100+1.83 EUR
500+1.47 EUR
1000+1.37 EUR
3000+1.33 EUR
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Technische Details SIR120DP-T1-RE3 Vishay Semiconductors

Description: MOSFET N-CH 80V 24.7A/106A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc), Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V, Power Dissipation (Max): 5.4W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V.

Weitere Produktangebote SIR120DP-T1-RE3 nach Preis ab 1.39 EUR bis 4.17 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIR120DP-T1-RE3 SIR120DP-T1-RE3 Hersteller : Vishay Siliconix sir120dp.pdf Description: MOSFET N-CH 80V 24.7A/106A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
500+1.48 EUR
1000+1.39 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIR120DP-T1-RE3 SIR120DP-T1-RE3 Hersteller : Vishay Siliconix sir120dp.pdf Description: MOSFET N-CH 80V 24.7A/106A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIR120DP-T1-RE3 Hersteller : VISHAY sir120dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
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