SIR120DP-T1-RE3

SIR120DP-T1-RE3

Hersteller: Vishay
Trans MOSFET N-CH 80V 24.7A 8-Pin PowerPAK SO EP T/R
sir120dp.pdf sir120dp.pdf
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Technische Details SIR120DP-T1-RE3

Description: MOSFET N-CH 80V PP SO-8, Base Part Number: SIR120, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5.4W (Ta), 100W (Tc), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc), Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide).

Preis SIR120DP-T1-RE3 ab 0 EUR bis 0 EUR

SIR120DP-T1-RE3
SIR120DP-T1-RE3
Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 80-V (D-S) MOSFET
sir120dp-1766502.pdf
auf Bestellung 6321 Stücke
Lieferzeit 14-28 Tag (e)
SIR120DP-T1-RE3
SIR120DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V PP SO-8
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
sir120dp.pdf
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)
SIR120DP-T1-RE3
SIR120DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
sir120dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR120DP-T1-RE3
SIR120DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
sir120dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen