SIR120DP-T1-RE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 4.08 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.37 EUR |
| 3000+ | 1.33 EUR |
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Technische Details SIR120DP-T1-RE3 Vishay Semiconductors
Description: MOSFET N-CH 80V 24.7A/106A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc), Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V, Power Dissipation (Max): 5.4W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V.
Weitere Produktangebote SIR120DP-T1-RE3 nach Preis ab 1.39 EUR bis 4.17 EUR
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SIR120DP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 80V 24.7A/106A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V |
auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR120DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 24.7A/106A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V |
auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIR120DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.39 EUR |
| SIR120DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH