SIR140DP-T1-RE3

SIR140DP-T1-RE3

Hersteller: Vishay
Trans MOSFET N-CH 25V 71.9A 8-Pin PowerPAK SO EP T/R
sir140dp.pdf sir140dp.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 5890 Stücke
Lieferzeit 14-21 Tag (e)
94+ 1.74 EUR
98+ 1.55 EUR
99+ 1.48 EUR
105+ 1.33 EUR
250+ 1.26 EUR
500+ 1.19 EUR
1000+ 1.17 EUR
3000+ 1.15 EUR

Technische Details SIR140DP-T1-RE3

Description: MOSFET N-CHAN 25V POWERPAK SO-8, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V, Vgs (Max): +20V, -16V, Input Capacitance (Ciss) (Max) @ Vds: 8150pF @ 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8.

Preis SIR140DP-T1-RE3 ab 1.15 EUR bis 5.54 EUR

SIR140DP-T1-RE3
SIR140DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V POWERPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
sir140dp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 2.81 EUR
SIR140DP-T1-RE3
SIR140DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 71.9A/100A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
sir140dp.pdf
auf Bestellung 6209 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.54 EUR
10+ 4.96 EUR
100+ 3.99 EUR
500+ 3.28 EUR
1000+ 2.81 EUR
SIR140DP-T1-RE3
SIR140DP-T1-RE3
Hersteller: Vishay Semiconductors
MOSFET 25V Vds 20V Vgs PowerPAK SO-8
VISH_S_A0004023716_1-2569081.pdf
auf Bestellung 4853 Stücke
Lieferzeit 14-28 Tag (e)
SIR140DP-T1-RE3
SIR140DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 8150pF @ 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
sir140dp.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)