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SIR164DP-T1-GE3

SIR164DP-T1-GE3 Vishay Siliconix


sir164dp-new.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.37 EUR
Mindestbestellmenge: 3000
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Technische Details SIR164DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Power Dissipation (Max): 5.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V.

Weitere Produktangebote SIR164DP-T1-GE3 nach Preis ab 1.33 EUR bis 3.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIR164DP-T1-GE3 SIR164DP-T1-GE3 Hersteller : Vishay Siliconix sir164dp-new.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V
auf Bestellung 4516 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.33 EUR
10+ 2.71 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
SIR164DP-T1-GE3 SIR164DP-T1-GE3 Hersteller : Vishay Semiconductors sir164dp-new.pdf MOSFET 30V 50A 69W 2.5mohm @ 10V
auf Bestellung 4829 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.38 EUR
19+ 2.78 EUR
100+ 2.16 EUR
500+ 1.83 EUR
1000+ 1.49 EUR
3000+ 1.4 EUR
6000+ 1.33 EUR
Mindestbestellmenge: 16
SIR164DP-T1-GE3 Hersteller : VISHAY sir164dp-new.pdf QFN
auf Bestellung 96 Stücke:
Lieferzeit 21-28 Tag (e)
SIR164DP-T1-GE3 SIR164DP-T1-GE3 Hersteller : Vishay sir164dp.pdf Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
SIR164DP-T1-GE3 Hersteller : VISHAY sir164dp-new.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 3.2mΩ
Pulsed drain current: 70A
Power dissipation: 69W
Gate charge: 123nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR164DP-T1-GE3 Hersteller : VISHAY sir164dp-new.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 3.2mΩ
Pulsed drain current: 70A
Power dissipation: 69W
Gate charge: 123nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® SO8
Produkt ist nicht verfügbar