SIR164DP-T1-GE3 Vishay Semiconductors
auf Bestellung 4619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.96 EUR |
| 3000+ | 0.83 EUR |
Produktrezensionen
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Technische Details SIR164DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Power Dissipation (Max): 5.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V.
Weitere Produktangebote SIR164DP-T1-GE3 nach Preis ab 0.96 EUR bis 2.99 EUR
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SIR164DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 50A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V |
auf Bestellung 3273 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR164DP-T1-GE3 | Hersteller : VISHAY |
QFN |
auf Bestellung 96 Stücke: Lieferzeit 21-28 Tag (e) |
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SIR164DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR164DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR164DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SIR164DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Pulsed drain current: 70A Power dissipation: 69W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 123nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |