SIR178DP-T1-RE3

SIR178DP-T1-RE3

SIR178DP-T1-RE3

Hersteller: Vishay
Trans MOSFET N-CH 20V 100A 8-Pin PowerPAK SO EP T/R
sir178dp.pdf
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Technische Details SIR178DP-T1-RE3

Description: MOSFET N-CH 20V 100A/430A PPAK, Packaging: Cut Tape (CT), Manufacturer: Vishay Siliconix, Base Part Number: SIR178, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 6.3W (Ta), 104W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V, Vgs (Max): +12V, -8V, Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active.

Preis SIR178DP-T1-RE3 ab 0 EUR bis 0 EUR

SIR178DP-T1-RE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 100A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR178DP-T1-RE3
SIR178DP-T1-RE3
Hersteller: Vishay / Siliconix
MOSFET 20V N-CHANNEL (D-S) MOS
auf Bestellung 180 Stücke
Lieferzeit 14-28 Tag (e)
SIR178DP-T1-RE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 100A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR178DP-T1-RE3
SIR178DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR178
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 3112 Stücke
Lieferzeit 21-28 Tag (e)
SIR178DP-T1-RE3
SIR178DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)