SIR178DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 100A/430A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V
auf Bestellung 2441 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.98 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 1.89 EUR |
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Technische Details SIR178DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V, Power Dissipation (Max): 6.3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V.
Weitere Produktangebote SIR178DP-T1-RE3 nach Preis ab 2 EUR bis 4.21 EUR
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SIR178DP-T1-RE3 | Hersteller : Vishay / Siliconix |
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SIR178DP-T1-RE3 | Hersteller : VISHAY |
Description: VISHAY - SIR178DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 20 V, 430 A, 0.00031 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 430 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 104 Gate-Source-Schwellenspannung, max.: 1.5 Verlustleistung: 104 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 310 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 310 SVHC: Lead (19-Jan-2021) |
auf Bestellung 3942 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR178DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIR178DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 100A/430A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V Power Dissipation (Max): 6.3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V |
Produkt ist nicht verfügbar |