SIR178DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.51 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR178DP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR178DP-T1-RE3 - N-CHANNEL 20-V (D-S) MOSFET 42AJ0486, tariffCode: 0, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 430A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 1.5V, Verlustleistung: 104W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: N Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 400µohm, directShipCharge: 25.
Weitere Produktangebote SIR178DP-T1-RE3 nach Preis ab 1.57 EUR bis 5.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SIR178DP-T1-RE3 | VISHAY |
Description: VISHAY - SIR178DP-T1-RE3 - N-CHANNEL 20-V (D-S) MOSFET 42AJ0486 tariffCode: 0 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 430A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 104W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 400µohm directShipCharge: 25 |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR178DP-T1-RE3 | Vishay / Siliconix |
MOSFETs PPAKSO8 N-CH 20V 100A |
auf Bestellung 6467 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR178DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 100A/430A PPAK Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +12V, -8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 6.3W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 6376 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR178DP-T1-RE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIR178DP-T1-RE3 - N-CHANNEL 20-V (D-S) MOSFET 42AJ0486
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 430A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 104W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 400µohm
directShipCharge: 25
Description: VISHAY - SIR178DP-T1-RE3 - N-CHANNEL 20-V (D-S) MOSFET 42AJ0486
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 430A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 104W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 400µohm
directShipCharge: 25
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 73+ | 3.43 EUR |
| 87+ | 2.69 EUR |
| 108+ | 1.99 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.65 EUR |
| 2500+ | 1.57 EUR |
| SIR178DP-T1-RE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs PPAKSO8 N-CH 20V 100A
MOSFETs PPAKSO8 N-CH 20V 100A
auf Bestellung 6467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.93 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.75 EUR |
| SIR178DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 100A/430A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 12430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 6376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.18 EUR |
| 10+ | 3.32 EUR |
| 50+ | 2.53 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.83 EUR |