SIR428DP-T1-GE3

SIR428DP-T1-GE3

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Technische Details SIR428DP-T1-GE3

Description: MOSFET N-CH D-S 30V PPAK 8SOIC, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Power - Max: 22.7W, Input Capacitance (Ciss) (Max) @ Vds: 1117pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 30A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SO-8.

Preis SIR428DP-T1-GE3 ab 0 EUR bis 0 EUR

SIR428DP-T1-GE3
SIR428DP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 78-SIRA12DP-T1-GE3
sir428dp-1764696.pdf
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SIR428DP-T1-GE3
SIR428DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V PPAK 8SOIC
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power - Max: 22.7W
Input Capacitance (Ciss) (Max) @ Vds: 1117pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
sir428dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen