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SIR472DP-T1-GE3


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Technische Details SIR472DP-T1-GE3

Description: MOSFET N-CH 30V 20A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V, Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.

Weitere Produktangebote SIR472DP-T1-GE3

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SIR472DP-T1-GE3 SIR472DP-T1-GE3 Hersteller : Vishay sir472dp.pdf Trans MOSFET N-CH 30V 20A 8-Pin PowerPAK SO EP T/R
Produkt ist nicht verfügbar
SIR472DP-T1-GE3 SIR472DP-T1-GE3 Hersteller : Vishay Siliconix sir472dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
SIR472DP-T1-GE3 SIR472DP-T1-GE3 Hersteller : Vishay Siliconix sir472dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
SIR472DP-T1-GE3 SIR472DP-T1-GE3 Hersteller : Vishay / Siliconix VISH_S_A0001531031_1-2567603.pdf MOSFET RECOMMENDED ALT 78-SIRA18DP-T1-GE3
Produkt ist nicht verfügbar