SIR846ADP-T1-GE3

SIR846ADP-T1-GE3

SIR846ADP-T1-GE3

Hersteller: VISHAY
Description: VISHAY - SIR846ADP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 60 A, 0.0065 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 60
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 83
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0065
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.8
SVHC: Lead (19-Jan-2021)

sir846adp.pdf
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Technische Details SIR846ADP-T1-GE3

Description: MOSFET N-CH 100V 60A PPAK SO-8, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5.4W (Ta), 83W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V, Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Part Status: Active, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount.

Preis SIR846ADP-T1-GE3 ab 0 EUR bis 0 EUR

SIR846ADP-T1-GE3
SIR846ADP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
sir846adp-1764632.pdf
auf Bestellung 34 Stücke
Lieferzeit 14-28 Tag (e)
SIR846ADP-T1-GE3
SIR846ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
sir846adp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIR846ADP-T1-GE3
SIR846ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
sir846adp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)