SIR846ADP-T1-GE3
SIR846ADP-T1-GE3
Hersteller: VISHAYDescription: VISHAY - SIR846ADP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 60 A, 0.0065 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 60
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 83
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0065
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.8
SVHC: Lead (19-Jan-2021)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
586 Stücke
586 Stücke
Technische Details SIR846ADP-T1-GE3
Description: MOSFET N-CH 100V 60A PPAK SO-8, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5.4W (Ta), 83W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V, Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Part Status: Active, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount.
Preis SIR846ADP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Semiconductors MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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auf Bestellung 34 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 60A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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