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SIR872DP-T1-GE3

SIR872DP-T1-GE3 Vishay Semiconductors


sir872dp.pdf Hersteller: Vishay Semiconductors
MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
auf Bestellung 5995 Stücke:

Lieferzeit 697-711 Tag (e)
Anzahl Preis ohne MwSt
8+7.02 EUR
10+ 6.29 EUR
100+ 5.07 EUR
500+ 4.16 EUR
1000+ 3.87 EUR
Mindestbestellmenge: 8
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Technische Details SIR872DP-T1-GE3 Vishay Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 53.7A; Idm: 100A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 53.7A, Pulsed drain current: 100A, Power dissipation: 104W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 64nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.

Weitere Produktangebote SIR872DP-T1-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIR872DP-T1-GE3 SIR872DP-T1-GE3 Hersteller : Vishay Siliconix sir872dp.pdf Description: MOSFET N-CH 150V 53.7A PPAK SO-8
auf Bestellung 5455 Stücke:
Lieferzeit 21-28 Tag (e)
SIR872DP-T1-GE3 SIR872DP-T1-GE3 Hersteller : Vishay Siliconix sir872dp.pdf Description: MOSFET N-CH 150V 53.7A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIR872DP-T1-GE3 Hersteller : VISHAY sir872dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 53.7A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 53.7A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR872DP-T1-GE3 Hersteller : VISHAY sir872dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 53.7A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 53.7A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar