SIR872DP-T1-GE3

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Technische Details SIR872DP-T1-GE3
Description: MOSFET N-CH 150V 53.7A PPAK SO-8, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V, Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc), Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Base Part Number: SIR872.
Preis SIR872DP-T1-GE3 ab 0 EUR bis 0 EUR
SIR872DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 150V 53.7A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR872 ![]() |
auf Bestellung 5455 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIR872DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 150V 53.7A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR872 ![]() |
auf Bestellung 3000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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