SIR872DP-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.96 EUR |
| 250+ | 2.73 EUR |
| 500+ | 2.48 EUR |
| 1000+ | 2.13 EUR |
| 3000+ | 2.02 EUR |
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Technische Details SIR872DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 150V 53.7A PPAK SO-8, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V.
Weitere Produktangebote SIR872DP-T1-GE3 nach Preis ab 2.13 EUR bis 5.37 EUR
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SIR872DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 150V 53.7A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V |
auf Bestellung 1571 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR872DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 75 V
auf Bestellung 1571 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.37 EUR |
| 10+ | 3.5 EUR |
| 100+ | 2.45 EUR |
| 500+ | 2.13 EUR |