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SIRA02DP-T1-GE3

SIRA02DP-T1-GE3 Vishay Siliconix


sira02dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V
auf Bestellung 2563 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.08 EUR
10+ 3.39 EUR
100+ 2.7 EUR
500+ 2.28 EUR
1000+ 1.94 EUR
Mindestbestellmenge: 7
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Technische Details SIRA02DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V.

Weitere Produktangebote SIRA02DP-T1-GE3 nach Preis ab 1.86 EUR bis 4.08 EUR

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SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 Hersteller : Vishay Semiconductors sira02dp.pdf MOSFET 30V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 8928 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.08 EUR
16+ 3.35 EUR
100+ 2.26 EUR
250+ 2.25 EUR
500+ 2.06 EUR
1000+ 1.9 EUR
6000+ 1.86 EUR
Mindestbestellmenge: 13
SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 Hersteller : Vishay sira02dp.pdf Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
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SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 Hersteller : Vishay Siliconix sira02dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V
Produkt ist nicht verfügbar