SIRA02DP-T1-GE3

Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 60 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 60 Stücke

Lieferzeit 14-28 Tag (e)
Technische Details SIRA02DP-T1-GE3
Description: MOSFET N-CH 30V 50A PPAK SO-8, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 15V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis SIRA02DP-T1-GE3 ab 2.86 EUR bis 4.91 EUR
SIRA02DP-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIRA02DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SIRA02DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) ![]() |
auf Bestellung 2990 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SIRA02DP-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8 Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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