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SIRA02DP-T1-GE3

SIRA02DP-T1-GE3 Vishay Siliconix


sira02dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIRA02DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V.

Weitere Produktangebote SIRA02DP-T1-GE3 nach Preis ab 1.24 EUR bis 2.11 EUR

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SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 Hersteller : Vishay Siliconix sira02dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V
auf Bestellung 6428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
11+1.65 EUR
100+1.43 EUR
500+1.38 EUR
1000+1.32 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 Hersteller : Vishay Semiconductors sira02dp.pdf MOSFETs 30V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 4106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.71 EUR
100+1.47 EUR
500+1.46 EUR
1000+1.37 EUR
3000+1.24 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 Hersteller : Vishay sira02dp.pdf Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
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SIRA02DP-T1-GE3 Hersteller : VISHAY sira02dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 45.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIRA02DP-T1-GE3 Hersteller : VISHAY sira02dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 45.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 117nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH