SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
sira10bdp.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 17824 Stücke
Lieferzeit 14-21 Tag (e)
302+ 0.55 EUR
306+ 0.52 EUR
311+ 0.49 EUR
315+ 0.47 EUR
320+ 0.44 EUR
325+ 0.42 EUR
500+ 0.39 EUR
3000+ 0.38 EUR

Technische Details SIRA10BDP-T1-GE3

Description: MOSFET N-CH 30V 30A/60A PPAK SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc), Drain to Source Voltage (Vdss): 30V, Base Part Number: SIRA10, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 43W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 15V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V.

Preis SIRA10BDP-T1-GE3 ab 0.38 EUR bis 2.29 EUR

SIRA10BDP-T1-GE3
SIRA10BDP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
sira10bdp-1766364.pdf
auf Bestellung 5976 Stücke
Lieferzeit 14-28 Tag (e)
23+ 2.29 EUR
26+ 2.02 EUR
100+ 1.54 EUR
500+ 1.22 EUR
SIRA10BDP-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
sira10bdp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA10BDP-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
sira10bdp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA10BDP-T1-GE3
SIRA10BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA10
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
sira10bdp.pdf
auf Bestellung 2868 Stücke
Lieferzeit 21-28 Tag (e)
SIRA10BDP-T1-GE3
SIRA10BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Base Part Number: SIRA10
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
sira10bdp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen