SIRA10BDP-T1-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.65 EUR |
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Technische Details SIRA10BDP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V.
Weitere Produktangebote SIRA10BDP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SIRA10BDP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 30A/60A PPAK SO8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SIRA10BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 30A/60A PPAK SO8 Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIRA10BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIRA10BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 30A/60A PPAK SO8
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH