SIRA10DP-T1-GE3

SIRA10DP-T1-GE3

SIRA10DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

sira10dp.pdf
verfügbar/auf Bestellung
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)

10+ 2.65 EUR
12+ 2.36 EUR

Technische Details SIRA10DP-T1-GE3

Description: MOSFET N-CH 30V 60A PPAK SO-8, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Power Dissipation (Max): 5W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

Preis SIRA10DP-T1-GE3 ab 2.36 EUR bis 2.65 EUR

SIRA10DP-T1-GE3
SIRA10DP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
sira10dp-1761550.pdf
auf Bestellung 2859 Stücke
Lieferzeit 14-28 Tag (e)
SIRA10DP-T1-GE3
SIRA10DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
sira10dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen