Weitere Produktangebote SIRA10DP-T1-GE3 Vishay Siliconix nach Preis ab 0.75 EUR bis 3.08 EUR
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SIRA10DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 60A PPAK SO-8Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA10DP-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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SIRA10DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 4291 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA10DP-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 1786 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA10DP-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIRA10DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.75 EUR |
| SIRA10DP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 165+ | 1.07 EUR |
| SIRA10DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 4291 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 17+ | 1.3 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.84 EUR |
| SIRA10DP-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 1786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.08 EUR |
| 10+ | 1.96 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
| 3000+ | 0.83 EUR |
| SIRA10DP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)