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SIRB40DP-T1-GE3

SIRB40DP-T1-GE3 Vishay Siliconix


sirb40dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2287 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
10+ 3.26 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 8
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Technische Details SIRB40DP-T1-GE3 Vishay Siliconix

Description: MOSFET 2 N-CH 40V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46.2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.

Weitere Produktangebote SIRB40DP-T1-GE3 nach Preis ab 2.14 EUR bis 3.72 EUR

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SIRB40DP-T1-GE3 SIRB40DP-T1-GE3 Hersteller : Vishay Semiconductors sirb40dp-1764851.pdf MOSFET 40V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 36250 Stücke:
Lieferzeit 631-645 Tag (e)
Anzahl Preis ohne MwSt
14+3.72 EUR
16+ 3.33 EUR
100+ 2.59 EUR
500+ 2.14 EUR
Mindestbestellmenge: 14
SIRB40DP-T1-GE3 Hersteller : VISHAY sirb40dp.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SIRB40DP-T1-GE3 SIRB40DP-T1-GE3 Hersteller : Vishay Siliconix sirb40dp.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIRB40DP-T1-GE3 Hersteller : VISHAY sirb40dp.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20/±-16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar