SIRB40DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 40A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
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Technische Details SIRB40DP-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 40A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46.2W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V, Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SIRB40DP-T1-GE3 nach Preis ab 1.15 EUR bis 2.92 EUR
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SIRB40DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 40A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
auf Bestellung 8697 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRB40DP-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 25968 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIRB40DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 40V 40A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 8697 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 10+ | 2.19 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |
| SIRB40DP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 25968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.92 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.18 EUR |
| 3000+ | 1.15 EUR |