auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 3.42 EUR |
| 50+ | 2.9 EUR |
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Technische Details SIRS700DP-T1-GE3 Vishay
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 7.4W (Ta),132W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V.
Weitere Produktangebote SIRS700DP-T1-GE3 nach Preis ab 2.9 EUR bis 11.44 EUR
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SIRS700DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SIRS700DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta),132W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIRS700DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta),132W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 50 V |
auf Bestellung 4359 Stücke: Lieferzeit 21-28 Tag (e) |
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SIRS700DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET N-CH 100-V MSFT |
auf Bestellung 9919 Stücke: Lieferzeit 14-28 Tag (e) |
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SIRS700DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 30A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |