SIS407ADN-T1-GE3 Vishay Semiconductors
auf Bestellung 11327 Stücke:
Lieferzeit 702-716 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 2.03 EUR |
| 29+ | 1.81 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.88 EUR |
| 3000+ | 0.8 EUR |
| 6000+ | 0.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS407ADN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 18A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V, Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V.
Weitere Produktangebote SIS407ADN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SIS407ADN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 18A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
SIS407ADN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 18A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
|
| SIS407ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
 |
SIS407ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 18A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V |
Produkt ist nicht verfügbar |
|
|
|
SIS407ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 18A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V |
Produkt ist nicht verfügbar |
|
| SIS407ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -18A; Idm: -70A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -18A Pulsed drain current: -70A Power dissipation: 25W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 9mΩ Mounting: SMD Gate charge: 168nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |