SIS410DN-T1-GE3

SIS410DN-T1-GE3

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sis410dn.pdf sis410dn.pdf
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Technische Details SIS410DN-T1-GE3

Description: MOSFET N-CH 20V 35A PPAK 1212-8, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SIS410, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drain to Source Voltage (Vdss): 20V.

Preis SIS410DN-T1-GE3 ab 0 EUR bis 0 EUR

SIS410DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
sis410dn.pdf sis410dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS410DN-T1-GE3
SIS410DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
sis410dn.pdf sis410dn.pdf
auf Bestellung 2800 Stücke
Lieferzeit 14-28 Tag (e)
SIS410DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 20V 22A 8-Pin PowerPAK 1212 T/R
sis410dn.pdf sis410dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS410DN-T1-GE3
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIS410
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
sis410dn.pdf
auf Bestellung 135000 Stücke
Lieferzeit 21-28 Tag (e)
SIS410DN-T1-GE3
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
sis410dn.pdf
auf Bestellung 154531 Stücke
Lieferzeit 21-28 Tag (e)
SIS410DN-T1-GE3
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS410
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
sis410dn.pdf
auf Bestellung 137039 Stücke
Lieferzeit 21-28 Tag (e)