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SIS435DNT-T1-GE3

SIS435DNT-T1-GE3 Vishay


sis435dnt.pdf Hersteller: Vishay
Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2940 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
232+0.68 EUR
234+ 0.65 EUR
284+ 0.52 EUR
287+ 0.49 EUR
500+ 0.42 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 232
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Technische Details SIS435DNT-T1-GE3 Vishay

Description: MOSFET P-CH 20V 30A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V, Power Dissipation (Max): 3.7W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V.

Weitere Produktangebote SIS435DNT-T1-GE3 nach Preis ab 0.32 EUR bis 1.82 EUR

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SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Hersteller : Vishay sis435dnt.pdf Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
213+0.74 EUR
232+ 0.66 EUR
234+ 0.63 EUR
284+ 0.5 EUR
287+ 0.47 EUR
500+ 0.4 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 213
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Hersteller : Vishay Semiconductors sis435dnt.pdf MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T
auf Bestellung 4082 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
33+1.6 EUR
38+ 1.39 EUR
100+ 1.01 EUR
500+ 0.86 EUR
1000+ 0.74 EUR
3000+ 0.71 EUR
6000+ 0.67 EUR
Mindestbestellmenge: 33
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Hersteller : Vishay Siliconix sis435dnt.pdf Description: MOSFET P-CH 20V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
auf Bestellung 4378 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.58 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Hersteller : Vishay sis435dnt.pdf Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Hersteller : Vishay sis435dnt.pdf Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
SIS435DNT-T1-GE3 Hersteller : VISHAY sis435dnt.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Hersteller : Vishay Siliconix sis435dnt.pdf Description: MOSFET P-CH 20V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
Produkt ist nicht verfügbar
SIS435DNT-T1-GE3 Hersteller : VISHAY sis435dnt.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -30A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -30A
Pulsed drain current: -80A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar