auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 232+ | 0.63 EUR |
| 234+ | 0.6 EUR |
| 284+ | 0.48 EUR |
| 287+ | 0.46 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS435DNT-T1-GE3 Vishay
Description: MOSFET P-CH 20V 30A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V, Power Dissipation (Max): 3.7W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V.
Weitere Produktangebote SIS435DNT-T1-GE3 nach Preis ab 0.29 EUR bis 1.23 EUR
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SIS435DNT-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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SIS435DNT-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T |
auf Bestellung 4082 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS435DNT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 30A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V |
auf Bestellung 4378 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS435DNT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SIS435DNT-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 30A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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| SIS435DNT-T1-GE3 | Hersteller : VISHAY |
SIS435DNT-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SIS435DNT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 30A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V |
Produkt ist nicht verfügbar |