SIS454DN-T1-GE3

SIS454DN-T1-GE3

SIS454DN-T1-GE3

Hersteller: VISHAY
Description: VISHAY - SIS454DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 35 A, 0.003 ohm, PowerPAK 1212, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 35
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 3.8
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.003
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1
SVHC: Lead (19-Jan-2021)

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Technische Details SIS454DN-T1-GE3

Description: MOSFET N-CH 20V 35A 1212-8 PPAK, Base Part Number: SIS454, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SIS454DN-T1-GE3 ab 0 EUR bis 0 EUR

SIS454DN-T1-GE3
SIS454DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 20V Vgs PowerPAK 1212-8
sis454dn-1764650.pdf
auf Bestellung 3261 Stücke
Lieferzeit 14-28 Tag (e)
SIS454DN-T1-GE3
SIS454DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS454
sis454dn.pdf
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SIS454DN-T1-GE3
SIS454DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A 1212-8 PPAK
Base Part Number: SIS454
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sis454dn.pdf
auf Bestellung 2672 Stücke
Lieferzeit 21-28 Tag (e)
SIS454DN-T1-GE3
SIS454DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS454
sis454dn.pdf
auf Bestellung 520 Stücke
Lieferzeit 21-28 Tag (e)