SIS862DN-T1-GE3 Vishay Semiconductors
auf Bestellung 53000 Stücke:
Lieferzeit 612-626 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.73 EUR |
| 24+ | 2.23 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.36 EUR |
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Technische Details SIS862DN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 40A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V.
Weitere Produktangebote SIS862DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIS862DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 40A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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| SIS862DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 40A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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SIS862DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 40A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V |
Produkt ist nicht verfügbar |
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SIS862DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 40A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 30 V |
Produkt ist nicht verfügbar |
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| SIS862DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Mounting: SMD Case: PowerPAK® 1212-8 Drain-source voltage: 60V Drain current: 40A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |