SISA24DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Description: MOSFET N-CH 25V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
auf Bestellung 2578 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.24 EUR |
14+ | 1.93 EUR |
100+ | 1.34 EUR |
500+ | 1.12 EUR |
1000+ | 0.95 EUR |
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Technische Details SISA24DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V.
Weitere Produktangebote SISA24DN-T1-GE3 nach Preis ab 0.83 EUR bis 2.25 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SISA24DN-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. |
auf Bestellung 11250 Stücke: Lieferzeit 14-28 Tag (e) |
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SISA24DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISA24DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 25 V, 60 A, 0.00115 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V euEccn: NLR Verlustleistung: 52W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.00115ohm |
auf Bestellung 31358 Stücke: Lieferzeit 14-21 Tag (e) |
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SISA24DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISA24DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 25 V, 60 A, 0.00115 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 52W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.00115ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) |
auf Bestellung 35478 Stücke: Lieferzeit 14-21 Tag (e) |
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SISA24DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 150A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20/±-16V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISA24DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V |
Produkt ist nicht verfügbar |
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SISA24DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 150A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20/±-16V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |