SISA35DN-T1-GE3 Vishay Semiconductors
auf Bestellung 92829 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.14 EUR |
61+ | 0.87 EUR |
100+ | 0.53 EUR |
1000+ | 0.36 EUR |
3000+ | 0.33 EUR |
9000+ | 0.3 EUR |
24000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISA35DN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 30V 10A/16A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Power Dissipation (Max): 3.2W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V.
Weitere Produktangebote SISA35DN-T1-GE3 nach Preis ab 0.35 EUR bis 1.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SISA35DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 10A/16A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
auf Bestellung 4773 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
SISA35DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISA35DN-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 16 A, 0.015 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 24W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm |
auf Bestellung 26130 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
SISA35DN-T1-GE3 | Hersteller : Vishay | P Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||
SISA35DN-T1-GE3 | Hersteller : VISHAY | SISA35DN-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
SISA35DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 10A/16A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
Produkt ist nicht verfügbar |