SISA35DN-T1-GE3

SISA35DN-T1-GE3

SISA35DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET P-CHANNEL 30-V (D-S) PowerPAK 1212-8
sisa35dn-1701819.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1363 Stücke
Lieferzeit 14-28 Tag (e)
37+ 1.43 EUR
46+ 1.15 EUR
100+ 0.79 EUR
500+ 0.59 EUR

Technische Details SISA35DN-T1-GE3

Description: MOSFET P-CH 30V 10A/16A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 24W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).

Preis SISA35DN-T1-GE3 ab 0.59 EUR bis 1.43 EUR

SISA35DN-T1-GE3
Hersteller: Vishay
P Channel MOSFET
sisa35dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA35DN-T1-GE3
Hersteller: Vishay
P Channel MOSFET
sisa35dn.pdf sisa35dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA35DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V PK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
sisa35dn.pdf
auf Bestellung 6015 Stücke
Lieferzeit 21-28 Tag (e)
SISA35DN-T1-GE3
SISA35DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
sisa35dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA35DN-T1-GE3
SISA35DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
sisa35dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen