SISA35DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1363 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 1363 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISA35DN-T1-GE3
Description: MOSFET P-CH 30V 10A/16A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 24W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Preis SISA35DN-T1-GE3 ab 0.59 EUR bis 1.43 EUR
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SISA35DN-T1-GE3 Hersteller: Vishay P Channel MOSFET 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SISA35DN-T1-GE3 Hersteller: Vishay P Channel MOSFET
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SISA35DN-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V PK 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
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auf Bestellung 6015 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 10A/16A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 10A/16A PPAK Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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