SISA35DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.24 EUR |
| 15000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISA35DN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISA35DN-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0497, tariffCode: 0, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 16A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.2V, Verlustleistung: 24W, SVHC: To Be Advised, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: P Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.019ohm, directShipCharge: 25.
Weitere Produktangebote SISA35DN-T1-GE3 nach Preis ab 0.24 EUR bis 1.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SISA35DN-T1-GE3 | Vishay Semiconductors |
MOSFET P-CHANNEL 30-V (D-S) PowerPAK 1212-8 |
auf Bestellung 92829 Stücke: Lieferzeit 10-14 Tag (e) |
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SISA35DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 10A/16A PPAK Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
auf Bestellung 15404 Stücke: Lieferzeit 10-14 Tag (e) |
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SISA35DN-T1-GE3 | VISHAY |
Description: VISHAY - SISA35DN-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0497 tariffCode: 0 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.2V Verlustleistung: 24W SVHC: To Be Advised Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.019ohm directShipCharge: 25 |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISA35DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFET P-CHANNEL 30-V (D-S) PowerPAK 1212-8
MOSFET P-CHANNEL 30-V (D-S) PowerPAK 1212-8
auf Bestellung 92829 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.43 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.24 EUR |
| SISA35DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 10A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 15404 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 29+ | 0.75 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| SISA35DN-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SISA35DN-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0497
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.2V
Verlustleistung: 24W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.019ohm
directShipCharge: 25
Description: VISHAY - SISA35DN-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0497
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.2V
Verlustleistung: 24W
SVHC: To Be Advised
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen III Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.019ohm
directShipCharge: 25
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 203+ | 1.24 EUR |
| 272+ | 0.86 EUR |
| 301+ | 0.71 EUR |
| 336+ | 0.64 EUR |
| 384+ | 0.56 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 2500+ | 0.42 EUR |