SISF00DN-T1-GE3

SISF00DN-T1-GE3

SISF00DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
sisf00dn-1766629.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 21000 Stücke
Lieferzeit 14-28 Tag (e)
14+ 3.9 EUR
16+ 3.3 EUR
100+ 2.7 EUR
500+ 2.31 EUR

Technische Details SISF00DN-T1-GE3

Description: MOSFET DUAL N-CH 30V POWERPAK 12, Supplier Device Package: PowerPAK® 1212-8SCD, Package / Case: PowerPAK® 1212-8SCD, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 69.4W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Drain to Source Voltage (Vdss): 30V, FET Feature: Standard, FET Type: 2 N-Channel (Dual) Common Drain, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SISF00DN-T1-GE3 ab 2.31 EUR bis 3.9 EUR

SISF00DN-T1-GE3
SISF00DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V POWERPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
sisf00dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SISF00DN-T1-GE3
SISF00DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V POWERPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
sisf00dn.pdf
auf Bestellung 4855 Stücke
Lieferzeit 21-28 Tag (e)