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SISF00DN-T1-GE3

SISF00DN-T1-GE3 Vishay Siliconix

sisf00dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PPAK 12
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.41 EUR
6000+ 1.34 EUR
9000+ 1.28 EUR
Mindestbestellmenge: 3000
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Technische Details SISF00DN-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 60A PPAK 12, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 69.4W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD Dual, Part Status: Active.

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SISF00DN-T1-GE3 SISF00DN-T1-GE3 Hersteller : Vishay Siliconix sisf00dn.pdf Description: MOSFET 2N-CH 30V 60A PPAK 12
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
auf Bestellung 20481 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.41 EUR
10+ 2.78 EUR
100+ 2.17 EUR
500+ 1.84 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 8
SISF00DN-T1-GE3 SISF00DN-T1-GE3 Hersteller : Vishay Semiconductors sisf00dn.pdf MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
auf Bestellung 21688 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.43 EUR
19+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
3000+ 1.44 EUR
Mindestbestellmenge: 16
SISF00DN-T1-GE3 Hersteller : VISHAY sisf00dn.pdf SISF00DN-T1-GE3 Multi channel transistors
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