SISF00DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 30V 60A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 69.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.89 EUR |
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Technische Details SISF00DN-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PWRPAK1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 69.4W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD Dual, Part Status: Active.
Weitere Produktangebote SISF00DN-T1-GE3 nach Preis ab 0.97 EUR bis 3.38 EUR
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SISF00DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD |
auf Bestellung 21022 Stücke: Lieferzeit 10-14 Tag (e) |
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SISF00DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 60A PWRPAK1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 69.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual Part Status: Active |
auf Bestellung 16910 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISF00DN-T1-GE3 | Hersteller : VISHAY |
SISF00DN-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |