SISF20DN-T1-GE3 Vishay Semiconductors
auf Bestellung 2759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.22 EUR |
| 3000+ | 1.14 EUR |
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Technische Details SISF20DN-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5.2W (Ta), 69.4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD Dual.
Weitere Produktangebote SISF20DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SISF20DN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R |
Produkt ist nicht verfügbar |
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SISF20DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R |
Produkt ist nicht verfügbar |
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| SISF20DN-T1-GE3 | Hersteller : VISHAY |
SISF20DN-T1-GE3 Multi channel transistors |
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SISF20DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual |
Produkt ist nicht verfügbar |
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SISF20DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual |
Produkt ist nicht verfügbar |