SISF20DN-T1-GE3

SISF20DN-T1-GE3

SISF20DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8SCD
sisf20dn-1766459.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 229 Stücke
Lieferzeit 14-28 Tag (e)
12+ 4.42 EUR
14+ 3.98 EUR
100+ 3.2 EUR
500+ 2.65 EUR

Technische Details SISF20DN-T1-GE3

Description: MOSFET DL N-CH 60V PPK 1212-8SCD, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Power - Max: 5.2W (Ta), 69.4W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD, Supplier Device Package: PowerPAK® 1212-8SCD, Base Part Number: SISF20.

Preis SISF20DN-T1-GE3 ab 2.65 EUR bis 4.42 EUR

SISF20DN-T1-GE3
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 60V PPK 1212-8SCD
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Base Part Number: SISF20
sisf20dn.pdf
auf Bestellung 24 Stücke
Lieferzeit 21-28 Tag (e)
SISF20DN-T1-GE3
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 60V PPK 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8SCD
sisf20dn.pdf
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
SISF20DN-T1-GE3
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 60V PPK 1212-8SCD
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Base Part Number: SISF20
sisf20dn.pdf
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