SISF20DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 229 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 229 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISF20DN-T1-GE3
Description: MOSFET DL N-CH 60V PPK 1212-8SCD, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: 2 N-Channel (Dual), FET Feature: Standard, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Power - Max: 5.2W (Ta), 69.4W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD, Supplier Device Package: PowerPAK® 1212-8SCD, Base Part Number: SISF20.
Preis SISF20DN-T1-GE3 ab 2.65 EUR bis 4.42 EUR
 Hersteller: Vishay Siliconix Description: MOSFET DL N-CH 60V PPK 1212-8SCD Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD Base Part Number: SISF20 
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auf Bestellung 24 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET DL N-CH 60V PPK 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.2W (Ta), 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drain to Source Voltage (Vdss): 60V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® 1212-8SCD
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auf Bestellung 40 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET DL N-CH 60V PPK 1212-8SCD Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD Base Part Number: SISF20
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