SISF20DN-T1-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.77 EUR |
| 3000+ | 1.63 EUR |
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Technische Details SISF20DN-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 60V 14A PWRPAK1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SCD Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5.2W (Ta), 69.4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SCD Dual.
Weitere Produktangebote SISF20DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SISF20DN-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 60V 14A PWRPAK1212Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SISF20DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 14A PWRPAK1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SCD Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5.2W (Ta), 69.4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8SCD Dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SISF20DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 18.5mΩ Pulsed drain current: 100A Power dissipation: 44.4W Gate charge: 33nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SISF20DN-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SISF20DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Description: MOSFET 2N-CH 60V 14A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SISF20DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Description: MOSFET 2N-CH 60V 14A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SCD Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Ta), 69.4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SISF20DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 18.5mΩ
Pulsed drain current: 100A
Power dissipation: 44.4W
Gate charge: 33nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 18.5mΩ
Pulsed drain current: 100A
Power dissipation: 44.4W
Gate charge: 33nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SISF20DN-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH