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SISF20DN-T1-GE3

SISF20DN-T1-GE3 Vishay Semiconductors

sisf20dn.pdf
Hersteller: Vishay Semiconductors
MOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8SCD
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10+2.59 EUR
100+1.78 EUR
500+1.49 EUR
1000+1.32 EUR
3000+1.25 EUR
6000+1.22 EUR
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Technische Details SISF20DN-T1-GE3 Vishay Semiconductors

Description: MOSFET 2N-CH 60V 14A/52A PPAK 12, Supplier Device Package: PowerPAK® 1212-8SCD Dual, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 5.2W (Ta), 69.4W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8SCD Dual, Packaging: Tape & Reel (TR).

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SISF20DN-T1-GE3 SISF20DN-T1-GE3 Vishay sisf20dn.pdf Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R
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SISF20DN-T1-GE3 SISF20DN-T1-GE3 Vishay Siliconix sisf20dn.pdf Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SISF20DN-T1-GE3 SISF20DN-T1-GE3 Vishay Siliconix sisf20dn.pdf Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SISF20DN-T1-GE3 VISHAY sisf20dn.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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SISF20DN-T1-GE3 sisf20dn.pdf
SISF20DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R
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SISF20DN-T1-GE3 sisf20dn.pdf
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SISF20DN-T1-GE3 sisf20dn.pdf
SISF20DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 14A/52A PPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD Dual
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SISF20DN-T1-GE3 sisf20dn.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH