SISH112DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 820 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 820 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISH112DN-T1-GE3
Description: MOSFET N-CH 30V 11.3A PPAK, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V, Power Dissipation (Max): 1.5W (Tc), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8SH, Package / Case: PowerPAK® 1212-8SH, Base Part Number: SISH112.
Preis SISH112DN-T1-GE3 ab 2.76 EUR bis 3.67 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V PPAK 1212-8SH Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drain to Source Voltage (Vdss): 30V 
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auf Bestellung 4050 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 11.3A PPAK Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH Base Part Number: SISH112
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 11.3A PPAK Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH Base Part Number: SISH112
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auf Bestellung 4046 Stücke Lieferzeit 21-28 Tag (e) |
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