SISH112DN-T1-GE3 Vishay Semiconductors
auf Bestellung 5530 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.46 EUR |
| 19+ | 2.86 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.52 EUR |
| 3000+ | 1.43 EUR |
| 6000+ | 1.36 EUR |
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Technische Details SISH112DN-T1-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 14.2A, Pulsed drain current: 60A, Power dissipation: 2W, Case: PowerPAK® 1212-8, Gate-source voltage: ±12V, On-state resistance: 8.2mΩ, Mounting: SMD, Gate charge: 27nC, Kind of package: reel; tape, Kind of channel: enhanced.
Weitere Produktangebote SISH112DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SISH112DN-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.2A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SISH112DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 11.3A PPAK |
Produkt ist nicht verfügbar |
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SISH112DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 11.3A PPAK |
Produkt ist nicht verfügbar |
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| SISH112DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.2A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±12V On-state resistance: 8.2mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |