SISH112DN-T1-GE3

SISH112DN-T1-GE3

SISH112DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
sish112dn-1766745.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 820 Stücke
Lieferzeit 14-28 Tag (e)
15+ 3.67 EUR
16+ 3.46 EUR
100+ 2.83 EUR
250+ 2.76 EUR

Technische Details SISH112DN-T1-GE3

Description: MOSFET N-CH 30V 11.3A PPAK, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V, Vgs (Max): ±12V, Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V, Power Dissipation (Max): 1.5W (Tc), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8SH, Package / Case: PowerPAK® 1212-8SH, Base Part Number: SISH112.

Preis SISH112DN-T1-GE3 ab 2.76 EUR bis 3.67 EUR

SISH112DN-T1-GE3
SISH112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V PPAK 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drain to Source Voltage (Vdss): 30V
sish112dn.pdf
auf Bestellung 4050 Stücke
Lieferzeit 21-28 Tag (e)
SISH112DN-T1-GE3
SISH112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
sish112dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SISH112DN-T1-GE3
SISH112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
sish112dn.pdf
auf Bestellung 4046 Stücke
Lieferzeit 21-28 Tag (e)