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SISH112DN-T1-GE3

SISH112DN-T1-GE3 Vishay Siliconix

sish112dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.92 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISH112DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 11.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V, Power Dissipation (Max): 1.5W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SH, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V.

Weitere Produktangebote SISH112DN-T1-GE3 nach Preis ab 0.92 EUR bis 2.96 EUR

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SISH112DN-T1-GE3 SISH112DN-T1-GE3 Hersteller : Vishay Semiconductors sish112dn.pdf MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
auf Bestellung 5530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.34 EUR
10+1.94 EUR
100+1.49 EUR
500+1.27 EUR
1000+1.03 EUR
3000+0.97 EUR
6000+0.92 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SISH112DN-T1-GE3 SISH112DN-T1-GE3 Hersteller : Vishay Siliconix sish112dn.pdf Description: MOSFET N-CH 30V 11.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 5502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2.07 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.04 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SISH112DN-T1-GE3 Hersteller : VISHAY sish112dn.pdf SISH112DN-T1-GE3 SMD N channel transistors
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