SISS23DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 50A PPAK 1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 15 V
auf Bestellung 2873 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.39 EUR |
| 15+ | 1.2 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.59 EUR |
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Technische Details SISS23DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK 1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 15 V.
Weitere Produktangebote SISS23DN-T1-GE3 nach Preis ab 0.73 EUR bis 2.01 EUR
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SISS23DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S |
auf Bestellung 1548 Stücke: Lieferzeit 14-28 Tag (e) |
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| SISS23DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 50A 8-Pin PowerPAK 1212-S T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS23DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -50A; Idm: -200A; 36W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Drain current: -50A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET On-state resistance: 4.5mΩ Gate-source voltage: ±8V Pulsed drain current: -200A Gate charge: 300nC Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SISS23DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 50A PPAK 1212-8S Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8840 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SISS23DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -50A; Idm: -200A; 36W Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36W Drain current: -50A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET On-state resistance: 4.5mΩ Gate-source voltage: ±8V Pulsed drain current: -200A Gate charge: 300nC Polarisation: unipolar |
Produkt ist nicht verfügbar |