SISS23DN-T1-GE3

SISS23DN-T1-GE3

Hersteller: VISHAY
Material: SISS23DN-T1-GE3 SMD P channel transistors
siss23dn.pdf siss23dn.pdf
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Technische Details SISS23DN-T1-GE3

Description: MOSFET P-CH 20V 50A PPAK 1212-8S, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SISS23, Package / Case: PowerPAK® 1212-8S, Supplier Device Package: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ).

Preis SISS23DN-T1-GE3 ab 0 EUR bis 0 EUR

SISS23DN-T1-GE3
SISS23DN-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 50A 8-Pin PowerPAK 1212-S T/R
siss23dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS23DN-T1-GE3
Hersteller: VISHAY
Material: SISS23DN-T1-GE3 SMD P channel transistors
siss23dn.pdf siss23dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS23DN-T1-GE3
SISS23DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
VISH_S_A0001144380_1-2567345.pdf
auf Bestellung 45660 Stücke
Lieferzeit 14-28 Tag (e)
SISS23DN-T1-GE3
SISS23DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK 1212-8S
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SISS23
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
siss23dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS23DN-T1-GE3
SISS23DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK 1212-8S
Base Part Number: SISS23
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
siss23dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS23DN-T1-GE3
SISS23DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK 1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
siss23dn.pdf
auf Bestellung 2560 Stücke
Lieferzeit 21-28 Tag (e)