SISS26LDN-T1-GE3
verfügbar/auf Bestellung
auf Bestellung 8 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 8 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISS26LDN-T1-GE3
Description: MOSFET N-CH 60V 81.2A PP 1212-8S, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V, Base Part Number: SISS26, Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8S, Operating Temperature: -55°C ~ 150°C (TJ), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), FET Type: N-Channel, Part Status: Active, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA.
Preis SISS26LDN-T1-GE3 ab 1.98 EUR bis 3.33 EUR
 Hersteller: Vishay Trans MOSFET N-CH 60V 23.7A 8-Pin PowerPAK 1212 EP T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 81.2A PP 1212-8S Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Base Part Number: SISS26 Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Operating Temperature: -55°C ~ 150°C (TJ) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) FET Type: N-Channel Part Status: Active Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA
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auf Bestellung 5900 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 23.7A/81.2A PPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) FET Type: N-Channel
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 23.7A/81.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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