SISS26LDN-T1-GE3

SISS26LDN-T1-GE3

SISS26LDN-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
VISH_S_A0011029504_1-2571641.pdf
verfügbar/auf Bestellung
auf Bestellung 8 Stücke
Lieferzeit 14-28 Tag (e)

16+ 3.33 EUR
18+ 3.02 EUR
100+ 2.35 EUR
500+ 1.98 EUR

Technische Details SISS26LDN-T1-GE3

Description: MOSFET N-CH 60V 81.2A PP 1212-8S, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V, Base Part Number: SISS26, Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8S, Operating Temperature: -55°C ~ 150°C (TJ), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), FET Type: N-Channel, Part Status: Active, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA.

Preis SISS26LDN-T1-GE3 ab 1.98 EUR bis 3.33 EUR

SISS26LDN-T1-GE3
SISS26LDN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 23.7A 8-Pin PowerPAK 1212 EP T/R
siss26ldn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS26LDN-T1-GE3
SISS26LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 81.2A PP 1212-8S
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Base Part Number: SISS26
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
FET Type: N-Channel
Part Status: Active
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
siss26ldn.pdf
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)
SISS26LDN-T1-GE3
SISS26LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
FET Type: N-Channel
siss26ldn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS26LDN-T1-GE3
SISS26LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
siss26ldn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen