SISS26LDN-T1-GE3 Vishay / Siliconix
auf Bestellung 231307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 0.9 EUR |
| 3000+ | 0.87 EUR |
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Technische Details SISS26LDN-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V.
Weitere Produktangebote SISS26LDN-T1-GE3 nach Preis ab 1.11 EUR bis 2.06 EUR
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SISS26LDN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 23.7A/81.2A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V |
auf Bestellung 619 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS26LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 65A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISS26LDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V |
Produkt ist nicht verfügbar |
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| SISS26LDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 65A |
Produkt ist nicht verfügbar |