SISS27ADN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 50A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 15 V
auf Bestellung 2364 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 2.18 EUR |
| 14+ | 1.88 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.93 EUR |
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Technische Details SISS27ADN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 15 V.
Weitere Produktangebote SISS27ADN-T1-GE3 nach Preis ab 1.37 EUR bis 2.55 EUR
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SISS27ADN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S |
auf Bestellung 39000 Stücke: Lieferzeit 448-462 Tag (e) |
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| SISS27ADN-T1-GE3 | Hersteller : VISHAY |
SISS27ADN-T1-GE3 SMD P channel transistors |
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SISS27ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 50A PPAK1212-8S Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 15 V |
Produkt ist nicht verfügbar |