SISS30DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.09 EUR |
| 6000+ | 1.04 EUR |
| 9000+ | 0.99 EUR |
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Technische Details SISS30DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc), Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V.
Weitere Produktangebote SISS30DN-T1-GE3 nach Preis ab 1.05 EUR bis 2.65 EUR
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SISS30DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc) Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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SISS30DN-T1-GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 5850 Stücke: Lieferzeit 119-133 Tag (e) |
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SISS30DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 15.9A 8-Pin PowerPAK 1212 EP T/R |
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| SISS30DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 80V Drain current: 43.5A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS30DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 43.5A; Idm: 120A Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 80V Drain current: 43.5A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A |
Produkt ist nicht verfügbar |