SISS30DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.66 EUR |
| 6000+ | 0.65 EUR |
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Technische Details SISS30DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK, Supplier Device Package: PowerPAK® 1212-8S, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8S, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V.
Weitere Produktangebote SISS30DN-T1-GE3 nach Preis ab 0.65 EUR bis 2.09 EUR
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SISS30DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S |
auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS30DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc) Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V |
auf Bestellung 12697 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS30DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S
MOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.78 EUR |
| 3000+ | 0.68 EUR |
| 6000+ | 0.65 EUR |
| SISS30DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
auf Bestellung 12697 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 13+ | 1.42 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.74 EUR |