SISS30LDN-T1-GE3

SISS30LDN-T1-GE3

SISS30LDN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 80V 16A 8-Pin PowerPAK 1212 EP T/R
siss30ldn.pdf
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Technische Details SISS30LDN-T1-GE3

Description: MOSFET N-CH 80V 16A/55.5A PPAK, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc), Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SISS30, Package / Case: PowerPAK® 1212-8S, Supplier Device Package: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

Preis SISS30LDN-T1-GE3 ab 0 EUR bis 0 EUR

SISS30LDN-T1-GE3
SISS30LDN-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8S
siss30ldn-1550676.pdf
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SISS30LDN-T1-GE3
SISS30LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Base Part Number: SISS30
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
siss30ldn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS30LDN-T1-GE3
SISS30LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SISS30
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
siss30ldn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen