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SISS30LDN-T1-GE3

SISS30LDN-T1-GE3 Vishay Siliconix

siss30ldn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.85 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SISS30LDN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 80V 16A/55.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V.

Weitere Produktangebote SISS30LDN-T1-GE3 nach Preis ab 0.84 EUR bis 2.87 EUR

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SISS30LDN-T1-GE3 SISS30LDN-T1-GE3 Hersteller : Vishay Semiconductors siss30ldn.pdf MOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S
auf Bestellung 3716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.55 EUR
10+1.90 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
3000+0.85 EUR
9000+0.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SISS30LDN-T1-GE3 SISS30LDN-T1-GE3 Hersteller : Vishay Siliconix siss30ldn.pdf Description: MOSFET N-CH 80V 16A/55.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+1.97 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SISS30LDN-T1-GE3 Hersteller : VISHAY siss30ldn.pdf SISS30LDN-T1-GE3 SMD N channel transistors
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