SISS40DN-T1-GE3

SISS40DN-T1-GE3

SISS40DN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 36.5A 8-Pin PowerPAK EP T/R
siss40dn.pdf
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Technische Details SISS40DN-T1-GE3

Description: MOSFET N-CH 100V 36.5A PPAK 1212, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 52W, Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc), Drain to Source Voltage (Vdss): 100V, FET Type: MOSFET N-Channel, Metal Oxide, Vgs(th) (Max) @ Id: 3.5V @ 250µA.

Preis SISS40DN-T1-GE3 ab 0 EUR bis 0 EUR

SISS40DN-T1-GE3
SISS40DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S
VISHS100176_1-2566333.pdf
auf Bestellung 278 Stücke
Lieferzeit 14-28 Tag (e)
SISS40DN-T1-GE3
SISS40DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 3.5V @ 250µA
siss40dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SISS40DN-T1-GE3
SISS40DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK 1212
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
siss40dn.pdf
auf Bestellung 5980 Stücke
Lieferzeit 21-28 Tag (e)
SISS40DN-T1-GE3
SISS40DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Drain to Source Voltage (Vdss): 100V
siss40dn.pdf
auf Bestellung 5980 Stücke
Lieferzeit 21-28 Tag (e)