SISS40DN-T1-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SISS40DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 36.5 A, 0.0176 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 52W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: ThunderFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0176ohm
SVHC: Lead (07-Nov-2024)
| Anzahl | Privatkunde |
|---|---|
| 137+ | 1.83 EUR |
| 164+ | 1.42 EUR |
| 192+ | 1.12 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISS40DN-T1-GE3 VISHAY
Description: VISHAY - SISS40DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 36.5 A, 0.0176 ohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 36.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.5V, euEccn: NLR, Verlustleistung: 52W, Bauform - Transistor: PowerPAK 1212, Anzahl der Pins: 8Pin(s), Produktpalette: ThunderFET, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0176ohm, SVHC: Lead (07-Nov-2024).
Weitere Produktangebote SISS40DN-T1-GE3 nach Preis ab 0.84 EUR bis 3.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SISS40DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 36.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V |
auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS40DN-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S |
auf Bestellung 9218 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISS40DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
Description: MOSFET N-CH 100V 36.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| SISS40DN-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S
auf Bestellung 9218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.22 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| 3000+ | 0.87 EUR |
| 6000+ | 0.84 EUR |