SISS64DN-T1-GE3

SISS64DN-T1-GE3

SISS64DN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212-S T/R
siss64dn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details SISS64DN-T1-GE3

Description: MOSFET N-CHANNEL 30V 40A 1212-8S, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V, Vgs (Max): +20V, -16V, Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V, Power Dissipation (Max): 57W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Package / Case: PowerPAK® 1212-8S, Base Part Number: SISS64.

Preis SISS64DN-T1-GE3 ab 0 EUR bis 0 EUR

SISS64DN-T1-GE3
SISS64DN-T1-GE3
Hersteller: VISHAY
Description: VISHAY - SISS64DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0018 ohm, PowerPAK 1212, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 40
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 57
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0018
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.2
SVHC: Lead (19-Jan-2021)
siss64dn.pdf siss64dn.pdf
2000 Stücke
SISS64DN-T1-GE3
SISS64DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
VISH_S_A0010924902_1-2571685.pdf
auf Bestellung 2047 Stücke
Lieferzeit 14-28 Tag (e)
SISS64DN-T1-GE3
SISS64DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 30V 40A 1212-8S
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Power Dissipation (Max): 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS64
siss64dn.pdf
auf Bestellung 11534 Stücke
Lieferzeit 21-28 Tag (e)
SISS64DN-T1-GE3
SISS64DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS64
siss64dn.pdf
auf Bestellung 1589 Stücke
Lieferzeit 21-28 Tag (e)
SISS64DN-T1-GE3
SISS64DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS64
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
siss64dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen