SISS64DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.8 EUR |
| 6000+ | 0.75 EUR |
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Technische Details SISS64DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V.
Weitere Produktangebote SISS64DN-T1-GE3 nach Preis ab 0.87 EUR bis 2.11 EUR
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SISS64DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK1212-8S Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V |
auf Bestellung 7212 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS64DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8S |
auf Bestellung 8911 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS64DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISS64DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0018 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 57W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0018ohm |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS64DN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISS64DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0018 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 57W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0018ohm |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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SISS64DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212-S T/R |
Produkt ist nicht verfügbar |
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| SISS64DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET + Schottky Case: PowerPAK® 1212-8 Technology: TrenchFET® Gate-source voltage: -16...20V Gate charge: 68nC On-state resistance: 2.86mΩ Power dissipation: 36W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISS64DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET + Schottky Case: PowerPAK® 1212-8 Technology: TrenchFET® Gate-source voltage: -16...20V Gate charge: 68nC On-state resistance: 2.86mΩ Power dissipation: 36W |
Produkt ist nicht verfügbar |